- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
8 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,682
有现货
|
Infineon Technologies | MOSFET P-CH 60V 18.6A TO-252 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 80W (Tc) | P-Channel | - | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,649
有现货
|
Infineon Technologies | MOSFET P-CH 60V 8.83A TO-252 | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | P-Channel | - | 60V | 8.83A (Ta) | 300 mOhm @ 10A, 6.2V | 4V @ 250µA | 13nC @ 10V | 420pF @ 25V | 6.2V | ±20V | ||
|
|
获得报价 |
2,226
有现货
|
Infineon Technologies | MOSFET P-CH 60V 30A DPAK | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 125W (Tc) | P-Channel | - | 60V | 30A (Tc) | 75 mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | 1535pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,045
有现货
|
Infineon Technologies | MOSFET P-CH 60V 9.7A DPAK | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | P-Channel | - | 60V | 9.7A (Tc) | 250 mOhm @ 6.8A, 10V | 2V @ 250µA | 21nC @ 10V | 450pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
814
有现货
|
Infineon Technologies | MOSFET P-CH 60V 9.7A TO252-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | P-Channel | - | 60V | 9.7A (Tc) | 250 mOhm @ 6.8A, 10V | 2V @ 250µA | 21nC @ 10V | 450pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,505
有现货
|
Infineon Technologies | MOSFET P-CH 60V 18.6A TO252-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 80W (Tc) | P-Channel | - | 60V | 18.6A (Tc) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,604
有现货
|
Infineon Technologies | MOSFET P-CH 60V 8.83A 3TO252 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | P-Channel | - | 60V | 8.83A (Ta) | 300 mOhm @ 10A, 6.2V | 4V @ 250µA | 13nC @ 10V | 420pF @ 25V | 6.2V | ±20V | ||
|
|
获得报价 |
1,750
有现货
|
Infineon Technologies | MOSFET P-CH 60V 30A TO252-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 125W (Tc) | P-Channel | - | 60V | 30A (Tc) | 75 mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | 1535pF @ 25V | 10V | ±20V |