- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 驱动电压(最大Rds接通,最小Rds接通) :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,327
有现货
|
Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 136W (Tc) | N-Channel | - | 55V | 30A (Tc) | 13 mOhm @ 30A, 10V | 2V @ 80µA | 69nC @ 10V | 1800pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,281
有现货
|
STMicroelectronics | MOSFET N-CH 33V 70A DPAK | SAFeFET™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 110W (Tc) | N-Channel | - | 33V | 70A (Tc) | 10.5 mOhm @ 30A, 10V | 3V @ 1mA | 32nC @ 5V | 1800pF @ 25V | 5V, 10V | ±20V | |||
|
获得报价 |
3,499
有现货
|
Vishay Siliconix | MOSFET N-CH 200V 19A DPAK | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 3W (Ta), 136W (Tc) | N-Channel | - | 200V | 19A (Tc) | 90 mOhm @ 5A, 10V | 4V @ 250µA | 51nC @ 10V | 1800pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
3,322
有现货
|
Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-11 | 136W (Tc) | N-Channel | - | 55V | 30A (Tc) | 13 mOhm @ 30A, 10V | 2V @ 80µA | 69nC @ 10V | 1800pF @ 25V | 4.5V, 10V | ±20V |