- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,612
有现货
|
ON Semiconductor | MOSFET N-CH 25V 20A D-PAK | PowerTrench® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | 3.7W (Ta), 42W (Tc) | N-Channel | - | 25V | 20A (Ta), 40A (Tc) | 5.7 mOhm @ 20A, 10V | 3V @ 250µA | 41nC @ 10V | 2315pF @ 13V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,018
有现货
|
Infineon Technologies | MOSFET N-CH 800V 6A DPAK | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 800V | 6A (Ta) | 900 mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41nC @ 10V | 785pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,350
有现货
|
STMicroelectronics | MOSFET N-CHANNEL 40V 80A DPAK | STripFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 134W (Tc) | N-Channel | - | 40V | 80A (Tc) | 3.5 mOhm @ 40A, 10V | 4V @ 250µA | 41nC @ 10V | 2790pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,362
有现货
|
ON Semiconductor | MOSFET N-CH 30V 13A SGL DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 1.4W (Ta), 52W (Tc) | N-Channel | - | 30V | 13A (Ta), 79A (Tc) | 3.7 mOhm @ 30A, 10V | 2.2V @ 250µA | 41nC @ 10V | 3052pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,651
有现货
|
Nexperia USA Inc. | MOSFET N-CH 75V 70A DPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 158W (Tc) | N-Channel | - | 75V | 70A (Tc) | 14 mOhm @ 25A, 10V | 4V @ 1mA | 41nC @ 10V | 2612pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,676
有现货
|
Infineon Technologies | MOSFET N-CH 800V 6A 3TO252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 800V | 6A (Ta) | 900 mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41nC @ 10V | 785pF @ 100V | 10V | ±20V | |||
|
获得报价 |
3,350
有现货
|
Infineon Technologies | MOSFET N-CH 200V 17A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 3W (Ta), 140W (Tc) | N-Channel | - | 200V | 17A (Tc) | 165 mOhm @ 10A, 10V | 5.5V @ 250µA | 41nC @ 10V | 910pF @ 25V | 10V | ±30V |