- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,627
有现货
|
Infineon Technologies | MOSFET N-CH 40V 90A TO252-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 94W (Tc) | N-Channel | - | 40V | 90A (Tc) | 3.8 mOhm @ 90A, 10V | 4V @ 45µA | 56nC @ 10V | 4500pF @ 20V | 10V | ±20V | |||
|
获得报价 |
1,678
有现货
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,240
有现货
|
Vishay Siliconix | MOSFET N-CH 40V 14A TO-252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 3.1W (Ta), 48.1W (Tc) | N-Channel | - | 40V | 14A (Ta), 50A (Tc) | 8.8 mOhm @ 20A, 10V | 3V @ 250µA | 56nC @ 10V | 2400pF @ 20V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,501
有现货
|
ON Semiconductor | MOSFET N-CH 30V 84A D-PAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | 83W (Ta) | N-Channel | - | 30V | 84A (Ta) | 5 mOhm @ 18A, 10V | 3V @ 250µA | 56nC @ 10V | 3845pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,149
有现货
|
Infineon Technologies | MOSFET N-CH 80V 38A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 80V | 38A (Tc) | 29 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1710pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,553
有现货
|
Infineon Technologies | MOSFET N-CH 100V 31A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V |