- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,844
有现货
|
Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 42W (Tc) | N-Channel | - | 800V | 1.9A (Tc) | 2.8 Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | 290pF @ 100V | 10V | ±20V | |||
|
获得报价 |
3,750
有现货
|
Infineon Technologies | MOSFET N-CH 800V 2A TO-252 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | N-Channel | - | 800V | 2A (Tc) | 2.7 Ohm @ 1.2A, 10V | 3.9V @ 120µA | 16nC @ 10V | 290pF @ 100V | 10V | ±20V | |||
|
获得报价 |
3,435
有现货
|
Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | CoolMOS™ CE | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | N-Channel | - | 800V | 1.9A (Tc) | 2.8 Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | 290pF @ 100V | 10V | ±20V | |||
|
获得报价 |
1,086
有现货
|
Infineon Technologies | MOSFET N-CH 800V 2A 3TO252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 42W (Tc) | N-Channel | - | 800V | 2A (Tc) | 2.7 Ohm @ 1.2A, 10V | 3.9V @ 120µA | 16nC @ 10V | 290pF @ 100V | 10V | ±20V |