- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,319
有现货
|
Infineon Technologies | MOSFET N-CH 60V 25A TO252-3 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-11 | 29W (Tc) | N-Channel | 60V | 25A (Tc) | 30 mOhm @ 25A, 10V | 2.2V @ 8µA | 16.3nC @ 10V | 1220pF @ 25V | 4.5V, 10V | ±16V | |||
|
获得报价 |
1,446
有现货
|
Infineon Technologies | MOSFET N-CH 60V 25A TO252-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-11 | 29W (Tc) | N-Channel | 60V | 25A (Tc) | 30 mOhm @ 25A, 10V | 2.2V @ 8µA | 16.3nC @ 10V | 1220pF @ 25V | 4.5V, 10V | ±16V | |||
|
获得报价 |
1,705
有现货
|
Rohm Semiconductor | NCH 200V 5A POWER MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 29W (Tc) | N-Channel | 200V | 5A (Tc) | 760 mOhm @ 2.5A, 10V | 5.25V @ 1mA | 8.3nC @ 10V | 330pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,019
有现货
|
Rohm Semiconductor | NCH 250V 4A POWER MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 29W (Tc) | N-Channel | 250V | 4A (Tc) | 1.3 Ohm @ 2A, 10V | 5.5V @ 1mA | 8.5nC @ 10V | 350pF @ 25V | 10V | ±30V |