- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,880
有现货
|
Infineon Technologies | MOSFET N-CH 600V 6.8A TO-252 | CoolMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 66W (Tc) | N-Channel | - | 600V | 6.8A (Tc) | 520 mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31nC @ 10V | 630pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,086
有现货
|
Infineon Technologies | MOSFET N-CH 600V 8.1A TO252 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 66W (Tc) | N-Channel | - | 600V | 8.1A (Tc) | 520 mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4nC @ 10V | 512pF @ 100V | 10V | ±20V | |||
|
获得报价 |
728
有现货
|
Infineon Technologies | MOSFET N-CH 600V 8.1A TO252 | CoolMOS™ C6 | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 66W (Tc) | N-Channel | - | 600V | 8.1A (Tc) | 520 mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4nC @ 10V | 512pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,141
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 30A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 66W (Tc) | N-Channel | - | 60V | 30A (Tc) | 34 mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | 1180pF @ 30V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,170
有现货
|
ON Semiconductor | TRENCH 6 40V FET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 66W (Tc) | N-Channel | - | 40V | 110A (Tc) | 3.5 mOhm @ 50A, 10V | 4V @ 250µA | 34.3nC @ 10V | 2300pF @ 20V | 10V | ±20V | |||
|
获得报价 |
3,962
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 46A DPAK | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 66W (Tc) | N-Channel | - | 60V | 46A (Tc) | 6.7 mOhm @ 23A, 10V | 2.5V @ 300µA | 26nC @ 10V | 1990pF @ 30V | 4.5V, 10V | ±20V |