- FET特性 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,864
有现货
|
Infineon Technologies | MOSFET N-CH 500V 4.3A PG-T0252 | CoolMOS™ CE | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 53W (Tc) | N-Channel | - | 500V | 4.3A (Tc) | 950 mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | 231pF @ 100V | 13V | ±20V | |||
|
获得报价 |
1,796
有现货
|
Infineon Technologies | MOSFET N-CH 600V 12A TO252-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 53W (Tc) | N-Channel | - | 600V | 12A (Tc) | 280 mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | 761pF @ 400V | 10V | ±20V | |||
|
获得报价 |
3,902
有现货
|
Infineon Technologies | MOSFET N-CH 700V 5.4A TO252-3 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 53W (Tc) | N-Channel | Super Junction | 700V | 5.4A (Tc) | 1.4 Ohm @ 1A, 10V | 3.5V @ 130µA | 10.5nC @ 10V | 225pF @ 100V | 10V | ±20V | |||
|
获得报价 |
1,270
有现货
|
Infineon Technologies | MOSFET N-CH 600V 12A TO252-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 53W (Tc) | N-Channel | - | 600V | 12A (Tc) | 280 mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | 761pF @ 400V | 10V | ±20V |