- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
731
有现货
|
STMicroelectronics | MOSFET N-CH 800V 6A DPAK | SuperMESH5™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 110W (Tc) | N-Channel | - | 800V | 6A (Tc) | 1.2 Ohm @ 3A, 10V | 5V @ 100µA | 13.4nC @ 10V | 360pF @ 100V | 10V | ±30V | |||
|
获得报价 |
1,612
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 110W (Tc) | N-Channel | - | 800V | 5.5A (Tc) | 1.2 Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4nC @ 10V | 685pF @ 100V | 10V | ±30V | |||
|
获得报价 |
1,293
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 800V 6A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 110W (Tc) | N-Channel | - | 800V | 6A (Tc) | 950 mOhm @ 3A, 10V | 4V @ 250µA | 19.6nC @ 10V | 691pF @ 100V | 10V | ±30V | |||
|
获得报价 |
1,932
有现货
|
STMicroelectronics | MOSFET N CH 800V 6A DPAK | SuperMESH5™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 110W (Tc) | N-Channel | - | 800V | 6A (Tc) | 950 mOhm @ 3A, 10V | 5V @ 100µA | 16.5nC @ 10V | 450pF @ 100V | 10V | ±30V |