- 供应商设备包 :
- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,844
有现货
|
Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 42W (Tc) | N-Channel | - | 800V | 1.9A (Tc) | 2.8 Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | 290pF @ 100V | 10V | ±20V | |||
|
获得报价 |
908
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 5A PW-MOLD | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD | 20W (Tc) | N-Channel | - | 60V | 5A (Ta) | 160 mOhm @ 2.5A, 10V | 2V @ 1mA | 12nC @ 10V | 370pF @ 10V | 4V, 10V | ±20V | |||
|
获得报价 |
3,971
有现货
|
Infineon Technologies | MOSFET N-CH 600V 7.3A TO252 | CoolMOS™ P6 | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 600V | 7.3A (Tc) | 600 mOhm @ 2.4A, 10V | - | 12nC @ 10V | 557pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,270
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A DPAK | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 820 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V |