- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,738
有现货
|
STMicroelectronics | MOSFET N CH 650V 9A DPAK | MDmesh™ V | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 85W (Tc) | N-Channel | - | 650V | 9A (Tc) | 480 mOhm @ 4.5A, 10V | 5V @ 250µA | 17nC @ 10V | 620pF @ 100V | 10V | ±25V | |||
|
获得报价 |
1,882
有现货
|
Infineon Technologies | MOSFET N-CH 500V 3.6A DPAK | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 78W (Tc) | N-Channel | - | 500V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 5V @ 250µA | 20nC @ 10V | 810pF @ 25V | 10V | ±20V | |||
|
获得报价 |
914
有现货
|
STMicroelectronics | MOSFET N-CH 500V 7.5A DPAK | MDmesh™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 100W (Tc) | N-Channel | - | 500V | 7.5A (Tc) | 800 mOhm @ 2.5A, 10V | 5V @ 250µA | 13nC @ 10V | 415pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,182
有现货
|
STMicroelectronics | MOSFET N-CH 600V 5A DPAK | MDmesh™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 96W (Tc) | N-Channel | - | 600V | 5A (Tc) | 1 Ohm @ 2.5A, 10V | 5V @ 250µA | 18nC @ 10V | 400pF @ 25V | 10V | ±30V |