- 供应商设备包 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,405
有现货
|
STMicroelectronics | MOSFET N-CHANNEL 40V 80A DPAK | STripFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 172W (Tc) | N-Channel | - | 40V | 80A (Tc) | 2.8 mOhm @ 40A, 10V | 4V @ 250µA | 63nC @ 10V | 4350pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,667
有现货
|
Infineon Technologies | MOSFET P-CH 55V 31A DPAK | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | P-Channel | - | 55V | 31A (Tc) | 65 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,559
有现货
|
ON Semiconductor | MOSFET P-CH 35V 13A DPAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | 3.1W (Ta), 57W (Tc) | P-Channel | - | 35V | 13A (Ta), 55A (Tc) | 11.6 mOhm @ 14A, 10V | 3V @ 250µA | 63nC @ 10V | 2370pF @ 20V | 4.5V, 10V | ±25V | ||
|
|
获得报价 |
2,313
有现货
|
Nexperia USA Inc. | MOSFET N-CH 55V 78A DPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 128W (Tc) | N-Channel | - | 55V | 78A (Tc) | 9.6 mOhm @ 15A, 10V | 2.8V @ 1mA | 63nC @ 10V | 4000pF @ 25V | 10V | ±16V | ||
|
|
获得报价 |
2,096
有现货
|
Infineon Technologies | MOSFET P-CH 55V 31A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | P-Channel | - | 55V | 31A (Tc) | 65 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,303
有现货
|
Infineon Technologies | MOSFET P-CH 55V 31A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | P-Channel | - | 55V | 31A (Tc) | 65 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V |