- 驱动电压(最大Rds接通,最小Rds接通) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
3,526
有现货
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | ||
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获得报价 |
2,395
有现货
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Infineon Technologies | MOSFET N-CH 60V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 60V | 56A (Tc) | 8.4 mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | 10V | ±20V | ||
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获得报价 |
1,438
有现货
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Infineon Technologies | MOSFET N-CH 75V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 75V | 56A (Tc) | 9 mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | 3070pF @ 50V | 10V | ±20V | ||
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获得报价 |
3,317
有现货
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Infineon Technologies | MOSFET N-CH 55V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 55V | 56A (Tc) | 16 mOhm @ 34A, 10V | 4V @ 250µA | 110nC @ 10V | 2430pF @ 25V | 10V | ±20V | ||
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获得报价 |
3,927
有现货
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 98W (Tc) | N-Channel | - | 40V | 56A (Tc) | 3.9 mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | 6V, 10V | ±20V | ||
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获得报价 |
804
有现货
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Infineon Technologies | MOSFET N-CH 30V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 50W (Tc) | N-Channel | - | 30V | 56A (Tc) | 9.5 mOhm @ 15A, 10V | 2.25V @ 25µA | 14nC @ 4.5V | 1150pF @ 15V | 4.5V, 10V | ±20V | ||
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获得报价 |
1,961
有现货
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Infineon Technologies | MOSFET N-CH 75V 56A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 99W (Tc) | N-Channel | - | 75V | 56A (Tc) | 11.2 mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | 3107pF @ 25V | 6V, 10V | ±20V | ||
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获得报价 |
2,196
有现货
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Infineon Technologies | MOSFET N-CH 60V 71A DPAK | StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 99W (Tc) | N-Channel | - | 60V | 56A (Tc) | 7.9 mOhm @ 43A, 10V | 3.7V @ 100µA | 87nC @ 10V | 3020pF @ 25V | 6V, 10V | ±20V | ||
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获得报价 |
2,108
有现货
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Infineon Technologies | MOSFET N CH 100V 56A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V |