- 系列 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,887
有现货
|
ON Semiconductor | MOSFET N-CH 500V DPAK | UniFET-II™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 62.5W (Tc) | N-Channel | 500V | 3.7A (Tc) | 1.75 Ohm @ 1.85A, 10V | 5V @ 250µA | 12nC @ 10V | 485pF @ 25V | 10V | ±25V | ||
|
|
获得报价 |
2,108
有现货
|
Vishay Siliconix | MOSFET N-CH 800V 2.8A DPAK | E | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 62.5W (Tc) | N-Channel | 800V | 2.8A (Tc) | 2.75 Ohm @ 1A, 10V | 4V @ 250µA | 19.6nC @ 10V | 315pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
2,504
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 700V 6A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 62.5W (Tc) | N-Channel | 700V | 6A (Tc) | 750 mOhm @ 1.8A, 10V | 4V @ 250µA | 10.7nC @ 10V | 555pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
967
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 6A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 62.5W (Tc) | N-Channel | 600V | 6A (Tc) | 750 mOhm @ 3A, 10V | 4V @ 250µA | 10.8nC @ 10V | 554pF @ 100V | 10V | ±30V |