- 零件状态 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
11 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
784
有现货
|
Renesas Electronics America | MOSFET N-CH 30V 60A TO-252 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3ZK) | 1.2W (Ta), 105W (Tc) | N-Channel | - | 30V | 60A (Tc) | 3.8 mOhm @ 30A, 10V | 4V @ 250µA | 135nC @ 10V | 7500pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
1,517
有现货
|
Renesas Electronics America | MOSFET N-CH TO-252 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 1.2W (Ta), 105W (Tc) | N-Channel | - | 40V | 90A (Tc) | 4 mOhm @ 45A, 10V | 4V @ 250µA | 135nC @ 10V | 7500pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
3,400
有现货
|
STMicroelectronics | MOSFET P-CH 60V 10A DPAK | STripFET™ II | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 40W (Tc) | P-Channel | - | 60V | 10A (Tc) | 200 mOhm @ 5A, 10V | 4V @ 250µA | 21nC @ 10V | 850pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
2,164
有现货
|
STMicroelectronics | MOSFET P-CH 100V 10A | STripFET™ F6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 40W (Tc) | P-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 5A, 10V | 4V @ 250µA | 16.5nC @ 10V | 864pF @ 80V | 10V | ±20V | ||
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|
获得报价 |
3,687
有现货
|
STMicroelectronics | MOSFET PCH 60V 10A DPAK | Automotive, AEC-Q101, STripFET™ F6 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 35W (Tc) | P-Channel | - | 60V | 10A (Tc) | 160 mOhm @ 5A, 10V | 4V @ 250µA | 6.4nC @ 10V | 340pF @ 48V | 10V | ±20V | ||
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|
获得报价 |
1,703
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 107W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.3 mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | 2550pF @ 10V | 10V | ±20V | ||
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|
获得报价 |
661
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 157W (Tc) | N-Channel | - | 100V | 55A (Ta) | 6.5 mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | 3280pF @ 10V | 10V | ±20V | ||
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获得报价 |
3,334
有现货
|
STMicroelectronics | MOSFET P CH 60V 10A DPAK | DeepGATE™, STripFET™ VI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 35W (Tc) | P-Channel | - | 60V | 10A (Tc) | 160 mOhm @ 5A, 10V | 4V @ 250µA | 6.4nC @ 10V | 340pF @ 48V | 10V | ±20V | ||
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|
获得报价 |
3,469
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 7A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 50W (Tc) | N-Channel | - | 100V | 7A (Ta) | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | 470pF @ 10V | 10V | ±20V | ||
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|
获得报价 |
2,824
有现货
|
Vishay Siliconix | MOSFET N-CHANNEL 40V TO252AA | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | - | N-Channel | - | 40V | - | - | - | 65nC @ 10V | - | 10V | - | ||
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|
获得报价 |
725
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 33A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 125W (Tc) | N-Channel | - | 100V | 33A (Ta) | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | 2050pF @ 10V | 10V | ±20V |