- 供应商设备包 :
- 功耗(最大) :
- FET特性 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
2,460
有现货
|
Infineon Technologies | MOSFET N-CH 900V 5.1A TO-252 | CoolMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 900V | 5.1A (Tc) | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
768
有现货
|
Infineon Technologies | MOSFET N-CH 900V 5.1A TO-252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 900V | 5.1A (Tc) | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | 10V | ±20V | ||
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|
获得报价 |
1,164
有现货
|
Infineon Technologies | MOSFET N-CH 650V 10.6A TO252-3 | CoolMOS™ C6 | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
3,521
有现货
|
Infineon Technologies | MOSFET N-CH 650V 10.6A TO252 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
1,345
有现货
|
Infineon Technologies | MOSFET N-CH 650V TO-252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 118W (Tc) | N-Channel | Super Junction | 650V | 15.1A (Tc) | 400 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | ||
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|
获得报价 |
3,268
有现货
|
STMicroelectronics | MOSFET N-CH 500V 13A DPAK | MDmesh™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 110W (Tc) | N-Channel | - | 500V | 13A (Tc) | 280 mOhm @ 6.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | 710pF @ 100V | 10V | ±25V | ||
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获得报价 |
2,942
有现货
|
Infineon Technologies | MOSFET N-CH 650V 10.6A TO252-3 | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V |