- FET型 :
- 25°C时的电流-连续漏极(Id) :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
645
有现货
|
Infineon Technologies | MOSFET P-CH 100V 14A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 79W (Tc) | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,012
有现货
|
STMicroelectronics | MOSFET N-CH 60V 28A DPAK | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 70W (Tc) | N-Channel | - | 60V | 28A (Tc) | 28 mOhm @ 15A, 10V | 4V @ 250µA | 58nC @ 10V | 1750pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,779
有现货
|
STMicroelectronics | MOSFET N-CH 60V 38A D2PAK | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | D2PAK | 80W (Tc) | N-Channel | - | 60V | 38A (Tc) | 28 mOhm @ 19A, 10V | 4V @ 250µA | 58nC @ 10V | 980pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,611
有现货
|
ON Semiconductor | MOSFET N-CH 100V 19A SO8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 5-DFN (5x6) (8-SOFL) | 3.4W (Ta), 165W (Tc) | N-Channel | - | 100V | 19A (Ta), 132A (Tc) | 4.8 mOhm @ 20A, 10V | 4V @ 250µA | 58nC @ 10V | 4200pF @ 50V | 6V, 10V | ±20V | |||
|
获得报价 |
741
有现货
|
Infineon Technologies | MOSFET P-CH 100V 13A DPAK | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,989
有现货
|
ON Semiconductor | MOSFET N-CH 100V 13A POWER56 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 2.5W (Ta), 104W (Tc) | N-Channel | - | 100V | 13A (Ta), 60A (Tc) | 8 mOhm @ 13A, 10V | 4V @ 250µA | 58nC @ 10V | 4120pF @ 50V | 6V, 10V | ±20V | |||
|
获得报价 |
2,609
有现货
|
Infineon Technologies | MOSFET P-CH 100V 13A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V |