- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
3,950
有现货
|
Vishay Siliconix | MOSFET P-CH 100V 37.1A TO252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 8.3W (Ta), 136W (Tc) | P-Channel | - | 100V | 37.1A (Tc) | 43 mOhm @ 9.2A, 10V | 3V @ 250µA | 160nC @ 10V | 4600pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,018
有现货
|
STMicroelectronics | MOSFET N-CH 100V 180A H2PAK-6 | STripFET™ F7 | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | H2PAK-6 | 300W (Tc) | N-Channel | - | 100V | 180A (Tc) | 2.5 mOhm @ 60A, 10V | 4.5V @ 250µA | 160nC @ 10V | 11550pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,468
有现货
|
Vishay Siliconix | MOSFET P-CH 100V 37.1A TO252 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 8.3W (Ta), 136W (Tc) | P-Channel | - | 100V | 37.1A (Tc) | 43 mOhm @ 9.2A, 10V | 3V @ 250µA | 160nC @ 10V | 4600pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
693
有现货
|
Vishay Siliconix | MOSFET P-CH 100V 28A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5.2W (Ta), 83W (Tc) | P-Channel | - | 100V | 28A (Tc) | 41 mOhm @ 7.8A, 10V | 3V @ 250µA | 160nC @ 10V | 4600pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,715
有现货
|
STMicroelectronics | MOSFET N-CH 100V 180A H2PAK-2 | STripFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | H2Pak-2 | 300W (Tc) | N-Channel | - | 100V | 180A (Tc) | 2.5 mOhm @ 60A, 10V | 4.5V @ 250µA | 160nC @ 10V | 11550pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,464
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 85A TO220AB | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | 3.75W (Ta), 250W (Tc) | N-Channel | - | 100V | 85A (Tc) | 10.5 mOhm @ 30A, 10V | 3V @ 250µA | 160nC @ 10V | 6550pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
989
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 85A TO220AB | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.75W (Ta), 250W (Tc) | N-Channel | - | 100V | 85A (Tc) | 10.5 mOhm @ 30A, 10V | 3V @ 250µA | 160nC @ 10V | 6550pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
763
有现货
|
Vishay Siliconix | MOSFET P-CH 100V 28A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5.2W (Ta), 83W (Tc) | P-Channel | - | 100V | 28A (Tc) | 41 mOhm @ 7.8A, 10V | 3V @ 250µA | 160nC @ 10V | 4600pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
623
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 110A D2PAK | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 3.75W (Ta), 375W (Tc) | N-Channel | - | 100V | 110A (Tc) | 9.5 mOhm @ 30A, 10V | 4V @ 250µA | 160nC @ 10V | 6700pF @ 25V | 10V | ±20V |