- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,645
有现货
|
Nexperia USA Inc. | MOSFET N-CH 100V 34.3A LFPAK | TrenchMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 62.5W (Tc) | N-Channel | - | 100V | 34.3A (Tc) | 23 mOhm @ 10A, 10V | 4V @ 1mA | 39nC @ 10V | 2264pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,181
有现货
|
STMicroelectronics | MOSFET N-CH 100V POWERFLAT5X6 | DeepGATE™, STripFET™ VII | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 5W (Ta), 100W (Tc) | N-Channel | - | 100V | 70A (Tc) | 10.5 mOhm @ 8A, 10V | 4V @ 250µA | 39nC @ 10V | 3550pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,226
有现货
|
ON Semiconductor | MOSFET N-CH 100V 22A D-PAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 3.8W (Ta), 60W (Tc) | N-Channel | - | 100V | 22A (Tc) | 64 mOhm @ 5.4A, 10V | 4V @ 250µA | 39nC @ 10V | 1514pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
1,318
有现货
|
Infineon Technologies | MOSFET N-CH 100V 8.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 8.3A (Ta) | 18 mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,688
有现货
|
Infineon Technologies | MOSFET N-CH 100V 15A | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 15A (Ta), 80A (Tc) | 8 mOhm @ 48A, 10V | 3.6V @ 100µA | 39nC @ 10V | 1685pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,156
有现货
|
Infineon Technologies | MOSFET N-CH 100V 35A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 100V | 35A (Tc) | 24 mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | 2700pF @ 25V | 4.5V, 10V | ±20V |