- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,442
有现货
|
Vishay Siliconix | MOSFET N-CHAN 100V POWERPAK SO-8 | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 62.5W (Tc) | N-Channel | - | 100V | 12A (Ta), 42.5A (Tc) | 14.4 mOhm @ 15A, 10V | 3.4V @ 250µA | 38nC @ 10V | 1850pF @ 50V | 7.5V, 10V | ±20V | ||
|
|
获得报价 |
3,337
有现货
|
Infineon Technologies | MOSFET N-CH 100V 80A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 83W (Tc) | N-Channel | - | 100V | 80A (Tc) | 7 mOhm @ 40A, 10V | 3.8V @ 50µA | 38nC @ 10V | 2700pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
3,390
有现货
|
Vishay Siliconix | MOSFET P-CH 100V 12A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 88W (Tc) | P-Channel | - | 100V | 12A (Tc) | 300 mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,035
有现货
|
Vishay Siliconix | MOSFET N-CHAN 100V POWERPAK 1212 | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 4.8W (Ta), 57W (Tc) | N-Channel | - | 100V | 11.8A (Ta), 40.5A (Tc) | 14.4 mOhm @ 15A, 10V | 3.4V @ 250µA | 38nC @ 10V | 1850pF @ 50V | 7.5V, 10V | ±20V | ||
|
|
获得报价 |
2,718
有现货
|
Nexperia USA Inc. | MOSFET N-CH 100V 49A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 157W (Tc) | N-Channel | - | 100V | 49A (Tc) | 26 mOhm @ 25A, 10V | 4V @ 1mA | 38nC @ 10V | 2891pF @ 25V | 10V | ±20V |