- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
2,763
有现货
|
Infineon Technologies | MOSFET N-CH 100V 35A TO252-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 100V | 35A (Tc) | 25 mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | 2070pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,751
有现货
|
Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,200
有现货
|
Infineon Technologies | MOSFET N-CH 100V 30A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 57W (Tc) | N-Channel | - | 100V | 30A (Tc) | 31 mOhm @ 30A, 10V | 2.4V @ 29µA | 31nC @ 10V | 1976pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,061
有现货
|
Infineon Technologies | MOSFET N-CH 100V 35A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 100V | 35A (Tc) | 25 mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | 2070pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,364
有现货
|
ON Semiconductor | MOSFET N-CH 100V 44A D2PAK | Automotive, AEC-Q101, PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 120W (Tc) | N-Channel | - | 100V | 7.2A (Ta), 44A (Tc) | 28 mOhm @ 44A, 10V | 4V @ 250µA | 31nC @ 10V | 1710pF @ 25V | 6V, 10V | ±20V | ||
|
|
获得报价 |
3,636
有现货
|
Infineon Technologies | MOSFET N-CH 100V 8.3A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 100V | 8.3A (Ta), 47A (Tc) | 22 mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1360pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,717
有现货
|
ON Semiconductor | MOSFET N-CH 100V 6.2A DPAK | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 3.1W (Ta), 69W (Tc) | N-Channel | - | 100V | 6.2A (Ta) | 36 mOhm @ 5.9A, 10V | 4.5V @ 250µA | 31nC @ 10V | 1740pF @ 50V | 10V | ±20V |