- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,640
有现货
|
Infineon Technologies | MOSFET N-CH 100V 27A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 58W (Tc) | N-Channel | - | 100V | 27A (Tc) | 33 mOhm @ 27A, 10V | 4V @ 29µA | 24nC @ 10V | 1570pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,724
有现货
|
Rohm Semiconductor | MOSFET N-CH 100V 17.5A CPT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 20W (Tc) | N-Channel | - | 100V | 17.5A (Ta) | 105 mOhm @ 8.8A, 10V | 2.5V @ 1mA | 24nC @ 10V | 950pF @ 25V | 4V, 10V | ±20V | ||
|
|
获得报价 |
2,999
有现货
|
Rohm Semiconductor | NCH 100V 17.5A POWER MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 20W (Tc) | N-Channel | - | 100V | 17.5A (Ta) | 105 mOhm @ 8.8A, 10V | 2.5V @ 1mA | 24nC @ 10V | 950pF @ 25V | 4V, 10V | ±20V | ||
|
|
获得报价 |
3,960
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 36.5A PPAK 1212 | ThunderFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerPAK® 1212-8S (3.3x3.3) | 3.7W (Ta), 52W (Tc) | N-Channel | - | 100V | 36.5A (Tc) | 21 mOhm @ 10A, 10V | 3.5V @ 250µA | 24nC @ 10V | 845pF @ 50V | 6V, 10V | ±20V |