- 零件状态 :
- 供应商设备包 :
- 功耗(最大) :
- FET特性 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,557
有现货
|
Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | Depletion Mode | 100V | 170mA (Ta) | 6 Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8nC @ 7V | 68pF @ 25V | 0V, 10V | ±20V | ||
|
|
获得报价 |
1,680
有现货
|
Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | - | 100V | 170mA (Ta) | 6 Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.67nC @ 10V | 69pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,092
有现货
|
Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | - | 100V | 170mA (Ta) | 6 Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.67nC @ 10V | 69pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,431
有现货
|
Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | - | 100V | 170mA (Ta) | 6 Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.67nC @ 10V | 69pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,150
有现货
|
Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 370mA (Ta) | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | 2.8V, 10V | ±20V | ||
|
|
获得报价 |
3,842
有现货
|
Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 370mA (Ta) | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | 2.8V, 10V | ±20V | ||
|
|
获得报价 |
865
有现货
|
Infineon Technologies | MOSFET N-CH 100V 170MA SOT23 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 360mW (Ta) | N-Channel | Depletion Mode | 100V | 170mA (Ta) | 6 Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8nC @ 7V | 68pF @ 25V | 0V, 10V | ±20V |