- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
3,219
有现货
|
Infineon Technologies | MOSFET N-CH 100V 13A 5X6 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 250W (Tc) | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | 4340pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
815
有现货
|
ON Semiconductor | MOSFET N-CH 100V 78A 8PQFN | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6), Power56 | 83W (Tc) | N-Channel | - | 100V | 78A (Tc) | 7.2 mOhm @ 28A, 10V | 4V @ 150µA | 24nC @ 6V | 2635pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
1,572
有现货
|
Infineon Technologies | MOSFET N-CH 100V 120A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,715
有现货
|
Infineon Technologies | MOSFET N-CH 100V 120A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 250W (Tc) | N-Channel | - | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,075
有现货
|
Infineon Technologies | MOSFET N-CH 100V 97A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 230W (Tc) | N-Channel | - | 100V | 97A (Tc) | 9 mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,902
有现货
|
Infineon Technologies | MOSFET N-CH 100V 88A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 200W (Tc) | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,341
有现货
|
Infineon Technologies | MOSFET N-CH 100V 13A 8-PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 250W (Tc) | N-Channel | - | 100V | 13A (Ta), 100A (Tc) | 9 mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | 4340pF @ 25V | 10V | ±20V |