- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,489
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 8.2A DPAK | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 3W (Ta), 136.4W (Tc) | N-Channel | - | 100V | 8.2A (Ta), 50A (Tc) | 18.5 mOhm @ 15A, 10V | 5V @ 250µA | 75nC @ 10V | 2600pF @ 50V | 10V | ±20V | |||
|
获得报价 |
1,543
有现货
|
Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,363
有现货
|
Infineon Technologies | MOSFET N-CH 100V 375A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric L8 | DIRECTFET L8 | 3.3W (Ta), 100W (Tc) | N-Channel | - | 100V | 19A (Ta), 114A (Tc) | 4.4 mOhm @ 68A, 10V | 5V @ 250µA | 120nC @ 10V | 5660pF @ 25V | 10V | ±20V | |||
|
获得报价 |
770
有现货
|
Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V |