- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
714
有现货
|
ON Semiconductor | MOSFET N-CH 100V 32A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 100V | 32A (Tc) | 37 mOhm @ 32A, 10V | 4V @ 250µA | 40nC @ 10V | 1450pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,807
有现货
|
Vishay Siliconix | MOSFET N-CH 100V POWERPAK SO8L | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 83W (Tc) | N-Channel | - | 100V | 32A (Tc) | 11 mOhm @ 10A, 10V | 2.5V @ 250µA | 51nC @ 10V | 2289pF @ 40V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,342
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 32A PPAK SO-8 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 83W (Tc) | N-Channel | - | 100V | 32A (Tc) | 26 mOhm @ 9.3A, 10V | 3.5V @ 250µA | 63nC @ 10V | 3342pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
3,318
有现货
|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 100V 32A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83.3W (Tc) | N-Channel | - | 100V | 32A (Tc) | 37 mOhm @ 10A, 10V | 3V @ 250µA | 34nC @ 10V | 1598pF @ 30V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,111
有现货
|
Infineon Technologies | MOSFET N-CH 100V 32A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 100V | 32A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,971
有现货
|
Nexperia USA Inc. | MOSFET N-CH 100V 32A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 86W (Tc) | N-Channel | - | 100V | 32A (Tc) | 34.5 mOhm @ 15A, 10V | 4V @ 1mA | 23.8nC @ 10V | 1201pF @ 50V | 10V | ±20V | |||
|
获得报价 |
3,197
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 32A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | - | 100V | 32A (Tc) | 8.8 mOhm @ 16A, 10V | 4V @ 500µA | 33nC @ 10V | 2800pF @ 50V | 10V | ±20V |