- 零件状态 :
- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,543
有现货
|
Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
730
有现货
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
770
有现货
|
Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | 530pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,227
有现货
|
Infineon Technologies | MOSFET N-CH 100V 5.7A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SJ | DIRECTFET™ SJ | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 5.7A (Ta), 25A (Tc) | 35 mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | 890pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,370
有现货
|
Infineon Technologies | MOSFET N-CH 100V 4.2A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SH | DIRECTFET™ SH | 2.2W (Ta), 42W (Tc) | N-Channel | - | 100V | 4.2A (Ta), 19A (Tc) | 62 mOhm @ 5A, 10V | 4.8V @ 25µA | 11.7nC @ 10V | 530pF @ 25V | 10V | ±20V |