- 零件状态 :
- 供应商设备包 :
- FET型 :
- 驱动电压(最大Rds接通,最小Rds接通) :
14 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
3,126
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 4.8A 8-SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.8W (Ta) | N-Channel | - | 100V | 4.8A (Ta) | 34 mOhm @ 6.9A, 10V | 2V @ 250µA (Min) | 30nC @ 10V | - | 6V, 10V | ±20V | ||
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获得报价 |
1,545
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 5.4A 8-SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.8W (Ta) | N-Channel | - | 100V | 5.4A (Ta) | 25 mOhm @ 7.9A, 10V | 2V @ 250µA (Min) | 44nC @ 10V | - | 6V, 10V | ±20V | ||
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获得报价 |
2,376
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 4.8A 8-SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.8W (Ta) | N-Channel | - | 100V | 4.8A (Ta) | 34 mOhm @ 6.9A, 10V | 2V @ 250µA (Min) | 30nC @ 10V | - | 6V, 10V | ±20V | ||
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获得报价 |
2,046
有现货
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.7A (Ta) | 300 mOhm @ 1.7A, 10V | 4V @ 1mA | - | 550pF @ 25V | 10V | ±20V | ||
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获得报价 |
2,194
有现货
|
Infineon Technologies | MOSFET P-CH 100V 0.68A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
1,313
有现货
|
Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
3,286
有现货
|
Infineon Technologies | MOSFET N-CH 100V 1.2A SOT-223 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.2A (Ta) | 600 mOhm @ 1.2A, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
2,738
有现货
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Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 1A (Tc) | 800 mOhm @ 1A, 10V | 1V @ 380µA | 16.5nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
3,335
有现货
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.8A (Ta) | 240 mOhm @ 1.8A, 10V | 4V @ 218µA | 9.3nC @ 10V | 265pF @ 25V | 10V | ±20V | ||
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获得报价 |
3,222
有现货
|
Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
1,133
有现货
|
Infineon Technologies | MOSFET P-CH 100V 0.68A SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 100V | 680mA (Ta) | 1.8 Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | 146pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
3,649
有现货
|
Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 100V | 1.8A (Ta) | 230 mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | 329pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
2,806
有现货
|
Diodes Incorporated | MOSFET N-CH 100V 2.3A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.8W (Ta) | N-Channel | - | 100V | 2.3A (Ta) | 220 mOhm @ 1.6A, 10V | 2.5V @ 250µA | 8.3nC @ 10V | 401pF @ 25V | 4.5V, 10V | ±20V | ||
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获得报价 |
2,468
有现货
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1.8W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V |