- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,204
有现货
|
Infineon Technologies | MOSFET N-CH 80V 22A | FASTIRFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN | 8-PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | - | 80V | 22A (Ta) | 3.9 mOhm @ 50A, 10V | 3.6V @ 150µA | 54nC @ 10V | 2311pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
1,966
有现货
|
ON Semiconductor | MOSFET N-CH 80V 90A DPAK | Automotive, AEC-Q101, PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | 150W (Tj) | N-Channel | - | 80V | 90A (Tc) | 7.9 mOhm @ 80A, 10V | 4V @ 250µA | 54nC @ 10V | 2530pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
3,925
有现货
|
ON Semiconductor | MOSFET N-CHANNEL 80V 90A TO252 | Automotive, AEC-Q101, PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 150W (Tj) | N-Channel | - | 80V | 90A (Tc) | 7.9 mOhm @ 80A, 10V | 4V @ 250µA | 54nC @ 10V | 2530pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
3,010
有现货
|
Vishay Siliconix | MOSFET N-CH 80V 60A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 62.5W (Tc) | N-Channel | - | 80V | 60A (Tc) | 8 mOhm @ 20A, 10V | 2.6V @ 250µA | 54nC @ 10V | 1855pF @ 40V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,810
有现货
|
Infineon Technologies | MOSFET N-CH 80V 100A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 104W (Tc) | N-Channel | - | 80V | 100A (Tc) | 4 mOhm @ 50A, 10V | 3.8V @ 67µA | 54nC @ 10V | 3900pF @ 40V | 6V, 10V | ±20V |