- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
7 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,358
有现货
|
STMicroelectronics | MOSFET N-CH 80V 180A H2PAK-2 | Automotive, AEC-Q101, STripFET™ F7 | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | H2Pak-2 | 315W (Tc) | N-Channel | - | 80V | 180A (Tc) | 2.1 mOhm @ 90A, 10V | 4.5V @ 250µA | 193nC @ 10V | 13600pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,188
有现货
|
Infineon Technologies | MOSFET N-CH 80V 180A TO263-7 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7 | 300W (Tc) | N-Channel | - | 80V | 180A (Tc) | 1.9 mOhm @ 100A, 10V | 3.5V @ 270µA | 206nC @ 10V | 14200pF @ 40V | 6V, 10V | ±20V | ||
|
|
获得报价 |
3,535
有现货
|
STMicroelectronics | MOSFET N-CH 80V 180A H2PAK-2 | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | H²PAK | 315W (Tc) | N-Channel | - | 80V | 180A (Tc) | 2.1 mOhm @ 90A, 10V | 4V @ 250µA | 193nC @ 10V | 13600pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
2,768
有现货
|
Infineon Technologies | MOSFET N-CH 80V 120A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7 | 375W (Tc) | N-Channel | - | 80V | 180A (Tc) | 1.5 mOhm @ 100A, 10V | 3.8V @ 279µA | 222nC @ 10V | 16900pF @ 40V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
2,262
有现货
|
Infineon Technologies | MOSFET N-CH TO263-7 | Automotive, AEC-Q101, OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 277W (Tc) | N-Channel | - | 80V | 180A (Tc) | 2.2 mOhm @ 100A, 10V | 4V @ 220µA | 167nC @ 10V | 11550pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,162
有现货
|
STMicroelectronics | MOSFET N-CH 80V 180A H2PAK-6 | DeepGATE™, STripFET™ VII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | H²PAK | 315W (Tc) | N-Channel | - | 80V | 180A (Tc) | 2.1 mOhm @ 90A, 10V | 4V @ 250µA | 193nC @ 10V | 13600pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,766
有现货
|
STMicroelectronics | MOSFET N-CH 80V 180A H2PAK-6 | Automotive, AEC-Q101, STripFET™ F7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | H2PAK-6 | 315W (Tc) | N-Channel | - | 80V | 180A (Tc) | 2.1 mOhm @ 90A, 10V | 4.5V @ 250µA | 193nC @ 10V | 13600pF @ 50V | 10V | ±20V |
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