- Rds开启(最大)@Id,Vgs :
-
- 11 mOhm @ 40A, 10V (1)
- 12 mOhm @ 15A, 10V (1)
- 12.5 mOhm @ 10A, 10V (1)
- 13 mOhm @ 11.7A, 10V (1)
- 13 mOhm @ 12.5A, 10V (1)
- 13.6 mOhm @ 45A, 10V (1)
- 15 mOhm @ 12A, 10V (1)
- 23 mOhm @ 10A, 10V (1)
- 3.1 mOhm @ 50A, 10V (1)
- 3.9 mOhm @ 50A, 10V (1)
- 35 mOhm @ 6A, 10V (1)
- 5.3 mOhm @ 90A, 10V (1)
- 9.5 mOhm @ 12A, 10V (2)
- 9.7 mOhm @ 46A, 10V (1)
- 驱动电压(最大Rds接通,最小Rds接通) :
15 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,306
有现货
|
Infineon Technologies | MOSFET N-CH 80V 26A | FASTIRFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | 8-VQFN | 8-PQFN (5x6) | 4W (Ta), 195W (Tc) | N-Channel | - | 80V | 26A (Ta) | 3.1 mOhm @ 50A, 10V | 3.6V @ 250µA | 74nC @ 10V | 3186pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
1,204
有现货
|
Infineon Technologies | MOSFET N-CH 80V 22A | FASTIRFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN | 8-PQFN (5x6) | 3.6W (Ta), 156W (Tc) | N-Channel | - | 80V | 22A (Ta) | 3.9 mOhm @ 50A, 10V | 3.6V @ 150µA | 54nC @ 10V | 2311pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
1,150
有现货
|
Infineon Technologies | MOSFET N-CH 80V 45A TO263-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 79W (Tc) | N-Channel | - | 80V | 45A (Tc) | 13.6 mOhm @ 45A, 10V | 3.5V @ 33µA | 25nC @ 10V | 1730pF @ 40V | 6V, 10V | ±20V | ||
|
|
获得报价 |
2,726
有现货
|
Infineon Technologies | MOSFET N-CH 80V 70A TO263-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 100W (Tc) | N-Channel | - | 80V | 70A (Tc) | 9.7 mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | 6V, 10V | ±20V | ||
|
|
获得报价 |
3,334
有现货
|
Infineon Technologies | MOSFET N-CH 80V 90A TO252-3 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 150W (Tc) | N-Channel | - | 80V | 90A (Tc) | 5.3 mOhm @ 90A, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | 6V, 10V | ±20V | ||
|
|
获得报价 |
1,395
有现货
|
Renesas Electronics America | MOSFET N-CH 80V LFPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 80V | 25A (Ta) | 13 mOhm @ 12.5A, 10V | - | 27nC @ 10V | 2000pF @ 10V | 10V | ±20V | ||
|
|
获得报价 |
1,142
有现货
|
Renesas Electronics America | MOSFET N-CH 80V 30A LFPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 55W (Tc) | N-Channel | - | 80V | 30A (Ta) | 12 mOhm @ 15A, 10V | - | 28nC @ 4.5V | 4150pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,895
有现货
|
NXP USA Inc. | MOSFET N-CH 80V 34A QFN3333 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 65W (Tc) | N-Channel | - | 80V | 34A (Tc) | 23 mOhm @ 10A, 10V | 4V @ 1mA | 21nC @ 10V | 1295pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
3,077
有现货
|
Vishay Siliconix | MOSFET N-CH 80V 6A 8-SOIC | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 80V | - | 35 mOhm @ 6A, 10V | 2V @ 250µA (Min) | 50nC @ 10V | - | 6V, 10V | ±20V | ||
|
|
获得报价 |
2,264
有现货
|
Infineon Technologies | MOSFET N-CH 80V 55A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 80V | 55A (Tc) | 15 mOhm @ 12A, 10V | 4.9V @ 100µA | 31nC @ 10V | 1320pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,451
有现货
|
Infineon Technologies | MOSFET N-CH 80V 12A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 80V | 12A (Ta), 68A (Tc) | 9.5 mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2060pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,106
有现货
|
STMicroelectronics | MOSFET N-CH 80V 80A D2PAK | STripFET™ II | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | N-Channel | - | 80V | 80A (Tc) | 11 mOhm @ 40A, 10V | 4V @ 250µA | 160nC @ 10V | 3700pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,870
有现货
|
Vishay Siliconix | MOSFET N-CH 80V 17.3A 8-SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.6W (Ta), 7.8W (Tc) | N-Channel | - | 80V | 17.3A (Tc) | 13 mOhm @ 11.7A, 10V | 4V @ 250µA | 53nC @ 10V | 2205pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
3,530
有现货
|
Vishay Siliconix | MOSFET N-CH 80V 32A PPAK SO-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5.2W (Ta), 64W (Tc) | N-Channel | - | 80V | 32A (Tc) | 12.5 mOhm @ 10A, 10V | 4.5V @ 250µA | 70nC @ 10V | 2840pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
2,958
有现货
|
Infineon Technologies | MOSFET N-CH 80V 12A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | DIRECTFET™ MN | 2.8W (Ta), 89W (Tc) | N-Channel | - | 80V | 12A (Ta), 68A (Tc) | 9.5 mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2060pF @ 25V | 10V | ±20V |