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漏极-源极电压(Vdss) :
驱动电压(最大Rds接通,最小Rds接通) :
15 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IRFH7004TR2PBF
获得报价
RFQ
3,946
有现货
Infineon Technologies MOSFET N CH 40V 100A PQFN5X6 HEXFET®, StrongIRFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad 8-PQFN (5x6) 156W (Tc) N-Channel - 40V 100A (Tc) 1.4 mOhm @ 100A, 10V 3.9V @ 150µA 194nC @ 10V 6419pF @ 25V 6V, 10V ±20V
IRFH7085TRPBF
单位
$1.81
获得报价
RFQ
2,312
有现货
Infineon Technologies MOSFET N-CH 60V 23A 6-PQFN StrongIRFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 156W (Tc) N-Channel - 60V 100A (Tc) 3.2 mOhm @ 75A, 10V 3.7V @ 150µA 165nC @ 10V 6460pF @ 25V 6V, 10V ±20V
FDMS8050
单位
$3.17
获得报价
RFQ
3,608
有现货
ON Semiconductor MOSFET N-CHANNEL 30V 55A 8PQFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 156W (Tc) N-Channel - 30V 55A (Tc) 0.65 mOhm @ 55A, 10V 3V @ 750µA 285nC @ 10V 22610pF @ 15V 4.5V, 10V ±20V
BSC046N10NS3GATMA1
单位
$3.05
获得报价
RFQ
2,723
有现货
Infineon Technologies MOSFET N-CH 100V 100A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 156W (Tc) N-Channel - 100V 17A (Ta), 100A (Tc) 4.6 mOhm @ 50A, 10V 3.5V @ 120µA 63nC @ 10V 4500pF @ 50V 6V, 10V ±20V
CSD18510Q5BT
单位
$2.58
获得报价
RFQ
1,349
有现货
Texas Instruments MOSFET N-CH 40V 300A 8VSON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSON-CLIP (5x6) 156W (Tc) N-Channel - 40V 300A (Tc) 0.96 mOhm @ 32A, 10V 2.3V @ 250µA 153nC @ 10V 11400pF @ 20V 4.5V, 10V ±20V
BSC105N10LSFGATMA1
单位
$3.06
获得报价
RFQ
3,823
有现货
Infineon Technologies MOSFET N-CH 100V 90A TDSON-8 OptiMOS™ Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 156W (Tc) N-Channel - 100V 11.4A (Ta), 90A (Tc) 10.5 mOhm @ 50A, 10V 2.4V @ 110µA 53nC @ 10V 3900pF @ 50V 4.5V, 10V ±20V
Default Photo
单位
$6.26
获得报价
RFQ
2,669
有现货
ON Semiconductor MOSFET N-CH 40V 420A 8PQFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (8x8) 156W (Tc) N-Channel - 40V 420A (Tc) 0.56 mOhm @ 64A, 10V 4V @ 250µA 338nC @ 10V 26110pF @ 20V 6V, 10V ±20V
CSD18510Q5B
单位
$2.35
获得报价
RFQ
3,601
有现货
Texas Instruments MOSFET N-CH 40V 300A 8VSON NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSON-CLIP (5x6) 156W (Tc) N-Channel - 40V 300A (Tc) 0.96 mOhm @ 32A, 10V 2.3V @ 250µA 153nC @ 10V 11400pF @ 20V 4.5V, 10V ±20V
BSC079N10NSGATMA1
单位
$2.71
获得报价
RFQ
3,086
有现货
Infineon Technologies MOSFET N-CH 100V 100A TDSON-8 OptiMOS™ Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 156W (Tc) N-Channel - 100V 13.4A (Ta), 100A (Tc) 7.9 mOhm @ 50A, 10V 4V @ 110µA 87nC @ 10V 5900pF @ 50V 10V ±20V
BSC100N10NSFGATMA1
单位
$2.33
获得报价
RFQ
2,728
有现货
Infineon Technologies MOSFET N-CH 100V 90A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 156W (Tc) N-Channel - 100V 11.4A (Ta), 90A (Tc) 10 mOhm @ 25A, 10V 4V @ 110µA 44nC @ 10V 2900pF @ 50V 10V ±20V
Default Photo
单位
$6.39
获得报价
RFQ
619
有现货
Infineon Technologies HIGH POWER_NEW CoolMOS™ C7 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8-2 156W (Tc) N-Channel - 650V 24A (Tc) 105 mOhm @ 8.9A, 10V 4V @ 440µA 35nC @ 10V 1670pF @ 400V 10V ±20V
IRFH7084TRPBF
单位
$2.39
获得报价
RFQ
1,878
有现货
Infineon Technologies MOSFET N-CH 40V 100A PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 156W (Tc) N-Channel - 40V 100A (Tc) 1.25 mOhm @ 100A, 10V 3.9V @ 150µA 190nC @ 10V 6560pF @ 25V 10V ±20V
TK65G10N1,RQ
单位
$2.96
获得报价
RFQ
2,518
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 100V 65A D2PAK U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 156W (Tc) N-Channel - 100V 65A (Ta) 4.5 mOhm @ 32.5A, 10V 4V @ 1mA 81nC @ 10V 5400pF @ 50V 10V ±20V
IRFH7004TRPBF
单位
$1.83
获得报价
RFQ
3,365
有现货
Infineon Technologies MOSFET N CH 40V 100A PQFN 5X6 HEXFET®, StrongIRFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VQFN Exposed Pad 8-PQFN (5x6) 156W (Tc) N-Channel - 40V 100A (Tc) 1.4 mOhm @ 100A, 10V 3.9V @ 150µA 194nC @ 10V 6419pF @ 25V 6V, 10V ±20V
BSC082N10LSGATMA1
单位
$2.72
获得报价
RFQ
3,842
有现货
Infineon Technologies MOSFET N-CH 100V 100A 8TDSON OptiMOS™ Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 156W (Tc) N-Channel - 100V 13.8A (Ta), 100A (Tc) 8.2 mOhm @ 100A, 10V 2.4V @ 110µA 104nC @ 10V 7400pF @ 50V 4.5V, 10V ±20V
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