- Rds开启(最大)@Id,Vgs :
-
- 0.56 mOhm @ 64A, 10V (1)
- 0.65 mOhm @ 55A, 10V (1)
- 0.96 mOhm @ 32A, 10V (2)
- 1.25 mOhm @ 100A, 10V (1)
- 1.4 mOhm @ 100A, 10V (2)
- 10 mOhm @ 25A, 10V (1)
- 10.5 mOhm @ 50A, 10V (1)
- 105 mOhm @ 8.9A, 10V (1)
- 3.2 mOhm @ 75A, 10V (1)
- 4.5 mOhm @ 32.5A, 10V (1)
- 4.6 mOhm @ 50A, 10V (1)
- 7.9 mOhm @ 50A, 10V (1)
- 8.2 mOhm @ 100A, 10V (1)
- 驱动电压(最大Rds接通,最小Rds接通) :
15 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,946
有现货
|
Infineon Technologies | MOSFET N CH 40V 100A PQFN5X6 | HEXFET®, StrongIRFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-PQFN (5x6) | 156W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
2,312
有现货
|
Infineon Technologies | MOSFET N-CH 60V 23A 6-PQFN | StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 156W (Tc) | N-Channel | - | 60V | 100A (Tc) | 3.2 mOhm @ 75A, 10V | 3.7V @ 150µA | 165nC @ 10V | 6460pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
3,608
有现货
|
ON Semiconductor | MOSFET N-CHANNEL 30V 55A 8PQFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 156W (Tc) | N-Channel | - | 30V | 55A (Tc) | 0.65 mOhm @ 55A, 10V | 3V @ 750µA | 285nC @ 10V | 22610pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,723
有现货
|
Infineon Technologies | MOSFET N-CH 100V 100A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 17A (Ta), 100A (Tc) | 4.6 mOhm @ 50A, 10V | 3.5V @ 120µA | 63nC @ 10V | 4500pF @ 50V | 6V, 10V | ±20V | |||
|
获得报价 |
1,349
有现货
|
Texas Instruments | MOSFET N-CH 40V 300A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON-CLIP (5x6) | 156W (Tc) | N-Channel | - | 40V | 300A (Tc) | 0.96 mOhm @ 32A, 10V | 2.3V @ 250µA | 153nC @ 10V | 11400pF @ 20V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,823
有现货
|
Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 11.4A (Ta), 90A (Tc) | 10.5 mOhm @ 50A, 10V | 2.4V @ 110µA | 53nC @ 10V | 3900pF @ 50V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,669
有现货
|
ON Semiconductor | MOSFET N-CH 40V 420A 8PQFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (8x8) | 156W (Tc) | N-Channel | - | 40V | 420A (Tc) | 0.56 mOhm @ 64A, 10V | 4V @ 250µA | 338nC @ 10V | 26110pF @ 20V | 6V, 10V | ±20V | |||
|
获得报价 |
3,601
有现货
|
Texas Instruments | MOSFET N-CH 40V 300A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON-CLIP (5x6) | 156W (Tc) | N-Channel | - | 40V | 300A (Tc) | 0.96 mOhm @ 32A, 10V | 2.3V @ 250µA | 153nC @ 10V | 11400pF @ 20V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,086
有现货
|
Infineon Technologies | MOSFET N-CH 100V 100A TDSON-8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 13.4A (Ta), 100A (Tc) | 7.9 mOhm @ 50A, 10V | 4V @ 110µA | 87nC @ 10V | 5900pF @ 50V | 10V | ±20V | |||
|
获得报价 |
2,728
有现货
|
Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 11.4A (Ta), 90A (Tc) | 10 mOhm @ 25A, 10V | 4V @ 110µA | 44nC @ 10V | 2900pF @ 50V | 10V | ±20V | |||
|
获得报价 |
619
有现货
|
Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 156W (Tc) | N-Channel | - | 650V | 24A (Tc) | 105 mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | 1670pF @ 400V | 10V | ±20V | |||
|
获得报价 |
1,878
有现货
|
Infineon Technologies | MOSFET N-CH 40V 100A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 156W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.25 mOhm @ 100A, 10V | 3.9V @ 150µA | 190nC @ 10V | 6560pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,518
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 65A D2PAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 156W (Tc) | N-Channel | - | 100V | 65A (Ta) | 4.5 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
|
获得报价 |
3,365
有现货
|
Infineon Technologies | MOSFET N CH 40V 100A PQFN 5X6 | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-PQFN (5x6) | 156W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | 6V, 10V | ±20V | |||
|
获得报价 |
3,842
有现货
|
Infineon Technologies | MOSFET N-CH 100V 100A 8TDSON | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 13.8A (Ta), 100A (Tc) | 8.2 mOhm @ 100A, 10V | 2.4V @ 110µA | 104nC @ 10V | 7400pF @ 50V | 4.5V, 10V | ±20V |