- 供应商设备包 :
- 25°C时的电流-连续漏极（Id） :
8 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
3,391
有现货
|
Infineon Technologies | MOSFET N-CH 650V 16A TO-263 | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 139W (Tc) | N-Channel | - | 650V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | ||
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获得报价 |
3,271
有现货
|
Infineon Technologies | MOSFET N-CH 650V 16.4A 4VSON | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 139W (Tc) | N-Channel | - | 650V | 16.4A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 32nC @ 10V | 1520pF @ 100V | 10V | ±20V | ||
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获得报价 |
1,726
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11A D2PAK | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 125W (Tc) | N-Channel | - | 650V | 11A (Tc) | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | 1200pF @ 25V | 10V | ±20V | ||
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获得报价 |
2,942
有现货
|
Infineon Technologies | MOSFET N-CH 650V 10.6A TO252-3 | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | ||
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获得报价 |
3,435
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11.1A 4VSON | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 96W (Tc) | N-Channel | - | 650V | 11.1A (Tc) | 299 mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||
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获得报价 |
1,596
有现货
|
Infineon Technologies | MOSFET N-CH 650V 7.3A D2PAK | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | 790pF @ 25V | 10V | ±20V | ||
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获得报价 |
1,029
有现货
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Infineon Technologies | MOSFET N-CH 650V 7.3A TO252 | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | ||
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获得报价 |
2,788
有现货
|
Infineon Technologies | MOSFET N-CH 650V 20.7A D2PAK | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 208W (Tc) | N-Channel | - | 650V | 20.7A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | 10V | ±20V |
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