- 供应商设备包 :
- 功耗(最大) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,349
有现货
|
Infineon Technologies | MOSFET N-CH 650V 7.3A DPAK | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | 790pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,153
有现货
|
Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | |||
|
获得报价 |
2,034
有现货
|
Infineon Technologies | MOSFET N-CH 600V 7.3A TO263 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 600V | 7.3A (Tc) | 600 mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | 440pF @ 100V | 10V | ±20V | |||
|
获得报价 |
944
有现货
|
Infineon Technologies | MOSFET N-CH 650V 7.3A TO263 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V |