- Rds开启(最大)@Id,Vgs :
-
- 11 mOhm @ 5.5A, 10V (1)
- 11.4 mOhm @ 8.5A, 10V (1)
- 114 mOhm @ 3.6A, 10V (1)
- 13.3 mOhm @ 9A, 10V (1)
- 14 mOhm @ 6.5A, 10V (1)
- 16 mOhm @ 8.5A, 10V (1)
- 198 mOhm @ 2.8A, 10V (1)
- 2.7 mOhm @ 22.5A, 10V (1)
- 22 mOhm @ 4.5A, 10V (1)
- 30 mOhm @ 4.8A, 10V (1)
- 33 mOhm @ 4.7A, 10V (1)
- 4.3 mOhm @ 20A, 10V (1)
- 59 mOhm @ 4.5A, 10V (1)
- 6 mOhm @ 13.5A, 10V (1)
- 7.5 mOhm @ 13A, 10V (1)
- 8.9 mOhm @ 10A, 10V (1)
- 驱动电压(最大Rds接通,最小Rds接通) :
16 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,591
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 13A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 13A (Ta) | 14 mOhm @ 6.5A, 10V | 4V @ 200µA | 15nC @ 10V | 1300pF @ 30V | 6.5V, 10V | ±20V | ||
|
|
获得报价 |
867
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 7.2A 8TSON | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 200V | 7.2A (Ta) | 114 mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
3,749
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | ||
|
|
获得报价 |
3,535
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 17A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 17A (Tc) | 11.4 mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,965
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,898
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8nC @ 4.5V | 820pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,125
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 9.6A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 80V | 9.6A (Tc) | 30 mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | 920pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
678
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 27A 8TSON-ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 32W (Tc) | N-Channel | - | 30V | 27A (Tc) | 6 mOhm @ 13.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,638
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 9A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 18W (Tc) | N-Channel | - | 60V | 9A (Ta) | 22 mOhm @ 4.5A, 10V | 4V @ 100µA | 12nC @ 10V | 710pF @ 30V | 6.5V, 10V | ±20V | ||
|
|
获得报价 |
2,875
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 17A 8TSON-ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 100V | 17A (Tc) | 16 mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,769
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 26A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 60V | 26A (Tc) | 7.5 mOhm @ 13A, 10V | 4V @ 200µA | 22nC @ 10V | 1800pF @ 30V | 6.5V, 10V | ±20V | ||
|
|
获得报价 |
908
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,785
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 5.6A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 250V | 5.6A (Ta) | 198 mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
3,799
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,235
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 40A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 80V | 18A (Tc) | 13.3 mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
3,337
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V |