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漏极-源极电压(Vdss) :
驱动电压(最大Rds接通,最小Rds接通) :
16 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
TPN14006NH,L1Q
获得报价
RFQ
2,591
有现货
Toshiba Semiconductor and Storage MOSFET N CH 60V 13A 8TSON-ADV U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 13A (Ta) 14 mOhm @ 6.5A, 10V 4V @ 200µA 15nC @ 10V 1300pF @ 30V 6.5V, 10V ±20V
TPN1110ENH,L1Q
获得报价
RFQ
867
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 200V 7.2A 8TSON U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 200V 7.2A (Ta) 114 mOhm @ 3.6A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPN5900CNH,L1Q
单位
$1.31
获得报价
RFQ
3,749
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 150V 9A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 150V 9A (Ta) 59 mOhm @ 4.5A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 75V 10V ±20V
TPN11006NL,LQ
单位
$0.91
获得报价
RFQ
3,535
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 17A (Tc) 11.4 mOhm @ 8.5A, 10V 2.5V @ 200µA 23nC @ 10V 2000pF @ 30V 4.5V, 10V ±20V
TPN11003NL,LQ
单位
$0.66
获得报价
RFQ
3,965
有现货
Toshiba Semiconductor and Storage MOSFET N CH 30V 11A 8TSON-ADV U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 19W (Tc) N-Channel - 30V 11A (Tc) 11 mOhm @ 5.5A, 10V 2.3V @ 100µA 7.5nC @ 10V 660pF @ 15V 4.5V, 10V ±20V
TPN8R903NL,LQ
单位
$0.72
获得报价
RFQ
3,898
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 30V 20A TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 22W (Tc) N-Channel - 30V 20A (Tc) 8.9 mOhm @ 10A, 10V 2.3V @ 100µA 9.8nC @ 4.5V 820pF @ 15V 4.5V, 10V ±20V
TPN30008NH,LQ
单位
$0.99
获得报价
RFQ
2,125
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 80V 9.6A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 80V 9.6A (Tc) 30 mOhm @ 4.8A, 10V 4V @ 100µA 11nC @ 10V 920pF @ 40V 10V ±20V
TPN6R003NL,LQ
单位
$0.99
获得报价
RFQ
678
有现货
Toshiba Semiconductor and Storage MOSFET N CH 30V 27A 8TSON-ADV U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 32W (Tc) N-Channel - 30V 27A (Tc) 6 mOhm @ 13.5A, 10V 2.3V @ 200µA 17nC @ 10V 1400pF @ 15V 4.5V, 10V ±20V
TPN22006NH,LQ
单位
$0.93
获得报价
RFQ
2,638
有现货
Toshiba Semiconductor and Storage MOSFET N CH 60V 9A 8-TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 18W (Tc) N-Channel - 60V 9A (Ta) 22 mOhm @ 4.5A, 10V 4V @ 100µA 12nC @ 10V 710pF @ 30V 6.5V, 10V ±20V
TPN1600ANH,L1Q
单位
$0.63
获得报价
RFQ
2,875
有现货
Toshiba Semiconductor and Storage MOSFET N CH 100V 17A 8TSON-ADV U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 100V 17A (Tc) 16 mOhm @ 8.5A, 10V 4V @ 200µA 19nC @ 10V 1600pF @ 50V 10V ±20V
TPN7R506NH,L1Q
单位
$0.99
获得报价
RFQ
2,769
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 60V 26A (Tc) 7.5 mOhm @ 13A, 10V 4V @ 200µA 22nC @ 10V 1800pF @ 30V 6.5V, 10V ±20V
TPN4R303NL,L1Q
单位
$1.00
获得报价
RFQ
908
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 30V 63A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 34W (Tc) N-Channel - 30V 40A (Tc) 4.3 mOhm @ 20A, 10V 2.3V @ 200µA 14.8nC @ 10V 1400pF @ 15V 4.5V, 10V ±20V
TPN2010FNH,L1Q
单位
$1.70
获得报价
RFQ
1,785
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 250V 5.6A (Ta) 198 mOhm @ 2.8A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPN2R703NL,L1Q
单位
$1.17
获得报价
RFQ
3,799
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.7 mOhm @ 22.5A, 10V 2.3V @ 300µA 21nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V
TPN13008NH,L1Q
单位
$1.03
获得报价
RFQ
1,235
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 80V 40A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 80V 18A (Tc) 13.3 mOhm @ 9A, 10V 4V @ 200µA 18nC @ 10V 1600pF @ 40V 10V ±20V
TPN3300ANH,LQ
单位
$0.99
获得报价
RFQ
3,337
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 100V 9.4A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 100V 9.4A (Tc) 33 mOhm @ 4.7A, 10V 4V @ 100µA 11nC @ 10V 880pF @ 50V 10V ±20V
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