- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,519
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 7.2A 8SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 200V | 7.2A (Ta) | 114 mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
986
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 5.5A 8-SOPA | π-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | N-Channel | - | 200V | 5.5A (Ta) | 450 mOhm @ 2.7A, 10V | 4V @ 1mA | 10nC @ 10V | 600pF @ 10V | 10V | ±20V | ||
|
|
获得报价 |
1,898
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 21A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | - | 200V | 13A (Ta) | 64 mOhm @ 6.5A, 10V | 4V @ 300µA | 11.2nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
1,287
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 33A SOP8 | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | N-Channel | - | 200V | 33A (Ta) | 29 mOhm @ 16.5A, 10V | 4V @ 1mA | 22nC @ 10V | 2200pF @ 100V | 10V | ±20V |