- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,644
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 10A TO-220AB | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | 10V | ±30V | ||
|
|
获得报价 |
1,016
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 6A TO-220AB | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | 600V | 6A (Ta) | 1.25 Ohm @ 3A, 10V | 4V @ 1mA | 30nC @ 10V | 1300pF @ 10V | 10V | ±30V | ||
|
|
获得报价 |
3,389
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 7A TO-220AB | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 78W (Tc) | N-Channel | 600V | 7A (Tc) | 600 mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | 680pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
2,503
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 33A TO-220AB | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 278W (Tc) | N-Channel | 600V | 33A (Tc) | 99 mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | 3508pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
2,720
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 18A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 223W (Tc) | N-Channel | 500V | 18A (Tc) | 270 mOhm @ 10A, 10V | 5V @ 250µA | 76nC @ 10V | 2942pF @ 25V | 10V | ±30V |