- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
2,319
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 650V | 35A (Ta) | 95 mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,936
有现货
|
Microsemi Corporation | MOSFET N-CH 500V 30A D3PAK | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 415W (Tc) | N-Channel | - | 500V | 30A (Tc) | 190 mOhm @ 14A, 10V | 5V @ 1mA | 115nC @ 10V | 4525pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,861
有现货
|
Microsemi Corporation | MOSFET N-CH 500V 30A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 415W (Tc) | N-Channel | - | 500V | 30A (Tc) | 190 mOhm @ 14A, 10V | 5V @ 1mA | 115nC @ 10V | 4525pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,962
有现货
|
Rohm Semiconductor | MOSFET N-CHANNEL 600V 76A TO247 | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 740W (Tc) | N-Channel | - | 600V | 76A (Tc) | 55 mOhm @ 38A, 10V | 5V @ 1mA | 115nC @ 10V | 7000pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,580
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 650V | 35A (Ta) | 95 mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,515
有现货
|
STMicroelectronics | MOSFET N-CH 900V 9.2A TO-247 | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 200W (Tc) | N-Channel | - | 900V | 9.2A (Tc) | 980 mOhm @ 4.6A, 10V | 4.5V @ 100µA | 115nC @ 10V | 3000pF @ 25V | 10V | ±30V |