- 系列 :
- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,054
有现货
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V TO220 | - | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 278W (Tc) | N-Channel | 650V | 12A (Tc) | 720 mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | 2150pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,712
有现货
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 12A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 278W (Tc) | N-Channel | 650V | 12A (Tc) | 720 mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | 2150pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,288
有现货
|
ON Semiconductor | MOSFET N-CH 250V 33A I2PAK | UniFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 235W (Tc) | N-Channel | 250V | 33A (Tc) | 94 mOhm @ 16.5A, 10V | 5V @ 250µA | 48nC @ 10V | 2135pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,892
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 5.1A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 60W (Tc) | N-Channel | 650V | 5.1A (Tc) | 930 mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
933
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 8.5A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 167W (Tc) | N-Channel | 650V | 8.5A (Tc) | 930 mOhm @ 5.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 10V | ±30V |