- 包装材料 :
- 工作温度 :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
14 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,137
有现货
|
Renesas Electronics America | MOSFET N-CH 500V 25A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | - | 500V | 25A (Ta) | 240 mOhm @ 12.5A, 10V | - | 66nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,166
有现货
|
Renesas Electronics America | MOSFET N-CH 150V W-PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK | 30W (Tc) | N-Channel | - | 150V | 25A (Ta) | 48 mOhm @ 12.5A, 10V | - | 38nC @ 10V | 2400pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,221
有现货
|
Renesas Electronics America | MOSFET N-CH 150V WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | WPAK(3F) (5x6) | 65W (Tc) | N-Channel | - | 150V | 25A (Ta) | 58 mOhm @ 12.5A, 10V | - | 19nC @ 10V | 1200pF @ 25V | 10V | ±30V | |||
|
获得报价 |
944
有现货
|
Renesas Electronics America | MOSFET N-CH 150V WPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | WPAK(3F) (5x6) | 65W (Tc) | N-Channel | - | 150V | 25A (Ta) | 48 mOhm @ 12.5A, 10V | - | 37nC @ 10V | 2200pF @ 25V | 10V | ±30V | |||
|
获得报价 |
2,491
有现货
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | DTMOSIV-H | Active | - | MOSFET (Metal Oxide) | 150°C | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 135 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
|
获得报价 |
876
有现货
|
Renesas Electronics America | MOSFET N-CHANNEL 500V 25A TO3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 150W (Ta) | N-Channel | - | 500V | 25A (Ta) | 240 mOhm @ 12.5A, 10V | - | 66nC @ 10V | 2600pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,389
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220AB | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
|
获得报价 |
2,344
有现货
|
Renesas Electronics America | MOSFET N-CH 150V W-PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK | 30W (Tc) | N-Channel | - | 150V | 25A (Ta) | 58 mOhm @ 12.5A, 10V | - | 20nC @ 10V | 1250pF @ 25V | 10V | ±30V | |||
|
获得报价 |
2,062
有现货
|
Sanken | MOSFET N-CH 250V 25A TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 40W (Tc) | N-Channel | - | 250V | 25A (Ta) | 75 mOhm @ 12A, 10V | 4.5V @ 1mA | - | 2000pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,527
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
|
获得报价 |
719
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220SIS | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
|
获得报价 |
2,939
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO247 | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
|
获得报价 |
846
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-3PN | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V | |||
|
获得报价 |
1,531
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220AB | DTMOSIV-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 180W (Tc) | N-Channel | - | 600V | 25A (Ta) | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | 2400pF @ 300V | 10V | ±30V |