- 包装材料 :
- 供应商设备包 :
- 功耗(最大) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,005
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 4A DPAK-3 | π-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 80W (Tc) | N-Channel | - | 550V | 4A (Ta) | 1.88 Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,459
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 4A DPAK-3 | π-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 80W (Tc) | N-Channel | - | 500V | 4A (Ta) | 2 Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,941
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 550V | 4A (Ta) | 1.88 Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,894
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 525V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 525V | 4A (Ta) | 1.7 Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,452
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 500V | 4A (Ta) | 2 Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | 380pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,356
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 4A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 4A (Ta) | 1.7 Ohm @ 2A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V |