- 包装材料 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
670
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 7A DPAK-3 | π-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 100W (Tc) | N-Channel | - | 500V | 7A (Ta) | 1.22 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,219
有现货
|
Renesas Electronics America | MOSFET N-CH 500V 6A MP3A | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MP-3A | 65W (Tc) | N-Channel | - | 500V | 6A (Ta) | 1.3 Ohm @ 3A, 10V | - | - | 600pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,930
有现货
|
Renesas Electronics America | MOSFET N-CH 500V 6A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FL | 27.4W (Tc) | N-Channel | - | 500V | 6A (Ta) | 1.3 Ohm @ 3A, 10V | - | - | 600pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,225
有现货
|
Rohm Semiconductor | MOSFET N-CH 500V 5A TO220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | - | 500V | 5A (Tc) | 1.5 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 14nC @ 10V | 600pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,538
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 7A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 500V | 7A (Ta) | 1.22 Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | 10V | ±30V |