- FET特性 :
- Rds开启（最大）@Id，Vgs :
-
- 1.5 Ohm @ 3.1A, 10V (1)
- 190 mOhm @ 7.9A, 10V (7)
- 230 mOhm @ 7.9A, 10V (1)
- 250 mOhm @ 6.9A, 10V (6)
- 260 mOhm @ 13A, 10V (2)
- 3.6 Ohm @ 1.95A, 10V (1)
- 30 mOhm @ 22A, 10V (2)
- 300 mOhm @ 6.9A, 10V (6)
- 360 mOhm @ 11A, 10V (1)
- 363 mOhm @ 6A, 10V (3)
- 382 mOhm @ 6A, 10V (3)
- 4.25 Ohm @ 1.8A, 10V (1)
- 445 mOhm @ 6A, 10V (2)
- 770 mOhm @ 7A, 10V (1)
- 800 mOhm @ 1.17A, 10V (3)
- 800 mOhm @ 4A, 10V (5)
48 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,163
有现货
|
ON Semiconductor | MOSFET N-CH 600V 6.2A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 130W (Tc) | N-Channel | - | 600V | 6.2A (Tc) | 1.5 Ohm @ 3.1A, 10V | 5V @ 250µA | 25nC @ 10V | 1000pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,566
有现货
|
ON Semiconductor | MOSFET N-CH 900V 3.6A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 130W (Tc) | N-Channel | - | 900V | 3.6A (Tc) | 4.25 Ohm @ 1.8A, 10V | 5V @ 250µA | 26nC @ 10V | 910pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,693
有现货
|
IXYS | MOSFET N-CH 800V 8A ISOPLUS220 | HiPerFET™, PolarHT™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 130W (Tc) | N-Channel | - | 800V | 8A (Tc) | 770 mOhm @ 7A, 10V | 5.5V @ 4mA | 61nC @ 10V | 3900pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,583
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
911
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 230 mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,267
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A D2PAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
1,291
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A D2PAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
2,459
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A D2PAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,787
有现货
|
STMicroelectronics | MOSFET N-CH 800V 12A D2PAK | MDmesh™ K5 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 800V | 12A (Tc) | 445 mOhm @ 6A, 10V | 5V @ 100µA | 22nC @ 10V | 620pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,069
有现货
|
STMicroelectronics | MOSFET N-CHANNEL 800V 12A TO220 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 800V | 12A (Tc) | 445 mOhm @ 6A, 10V | 5V @ 100µA | 22nC @ 10V | 620pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
906
有现货
|
IXYS | MOSFET N-CH 600V 12A ISOPLUS220 | HiPerFET™, PolarHT™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 130W (Tc) | N-Channel | - | 600V | 12A (Tc) | 360 mOhm @ 11A, 10V | 5V @ 4mA | 58nC @ 10V | 4000pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
790
有现货
|
IXYS | MOSFET N-CH 500V 15A ISOPLUS220 | HiPerFET™, PolarHT™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 130W (Tc) | N-Channel | - | 500V | 15A (Tc) | 260 mOhm @ 13A, 10V | 5.5V @ 4mA | 65nC @ 10V | 3600pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,292
有现货
|
IXYS | MOSFET N-CH 500V 15A ISOPLUS220 | PolarHV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 130W (Tc) | N-Channel | - | 500V | 15A (Tc) | 260 mOhm @ 13A, 10V | 5.5V @ 250µA | 65nC @ 10V | 3600pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
800
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,355
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-3P(N) | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,287
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,889
有现货
|
Vishay Siliconix | MOSFET N-CHAN 600V 24A POWERPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 11A (Tc) | 382 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1243pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
3,882
有现货
|
Vishay Siliconix | MOSFET N-CHAN 600V 24A POWERPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 11A (Tc) | 382 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1243pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
3,008
有现货
|
Vishay Siliconix | MOSFET N-CHAN 600V 24A POWERPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 11A (Tc) | 382 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1243pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
1,541
有现货
|
Vishay Siliconix | MOSFET N-CHAN 650V 12A POWERPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 12A (Tc) | 363 mOhm @ 6A, 10V | 4V @ 250µA | 68nC @ 10V | 1257pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
1,942
有现货
|
Vishay Siliconix | MOSFET N-CHAN 650V 12A POWERPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 12A (Tc) | 363 mOhm @ 6A, 10V | 4V @ 250µA | 68nC @ 10V | 1257pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
2,950
有现货
|
Vishay Siliconix | MOSFET N-CHAN 650V 12A POWERPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 12A (Tc) | 363 mOhm @ 6A, 10V | 4V @ 250µA | 68nC @ 10V | 1257pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
2,694
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,899
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
3,205
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A DPAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
2,636
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A DPAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
1,581
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
1,970
有现货
|
STMicroelectronics | N-CHANNEL 900 V, 0.60 OHM TYP., | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 130W (Tc) | N-Channel | - | 900V | 8A (Tc) | - | 5V @ 100µA | - | - | 10V | ±30V | ||
|
|
获得报价 |
3,911
有现货
|
STMicroelectronics | N-CHANNEL 900 V, 0.60 OHM TYP., | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 130W (Tc) | N-Channel | - | 900V | 8A (Tc) | - | 5V @ 100µA | - | - | 10V | ±30V | ||
|
|
|
获得报价 |
2,803
有现货
|
STMicroelectronics | N-CHANNEL 900 V, 0.60 OHM TYP., | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 900V | 8A (Tc) | - | 5V @ 100µA | - | - | 10V | ±30V |
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