- 零件状态 :
- 包装材料 :
- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,805
有现货
|
Global Power Technologies Group | MOSFET N-CH 500V 11A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 158W (Tc) | N-Channel | - | 500V | 11A (Tc) | 670 mOhm @ 5.5A, 10V | 4V @ 250µA | 28nC @ 10V | 1423pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,440
有现货
|
Global Power Technologies Group | MOSFET N-CH 600V 9A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 158W (Tc) | N-Channel | - | 600V | 9A (Tc) | 1 Ohm @ 4.5A, 10V | 4V @ 250µA | 27nC @ 10V | 1440pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,644
有现货
|
Global Power Technologies Group | MOSFET N-CH 500V 10A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 158W (Tc) | N-Channel | - | 500V | 10A (Tc) | 700 mOhm @ 5A, 10V | 3.5V @ 250µA | 28nC @ 10V | 1546pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,939
有现货
|
ON Semiconductor | MOSFET N-CH 900V 5.4A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 158W (Tc) | N-Channel | - | 900V | 5.4A (Tc) | 2.3 Ohm @ 2.7A, 10V | 5V @ 250µA | 40nC @ 10V | 1550pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,884
有现货
|
ON Semiconductor | MOSFET N-CH 800V 5.8A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 158W (Tc) | N-Channel | - | 800V | 5.8A (Tc) | 1.95 Ohm @ 2.9A, 10V | 5V @ 250µA | 31nC @ 10V | 1500pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,657
有现货
|
ON Semiconductor | MOSFET N-CH 800V 5.5A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 158W (Tc) | N-Channel | - | 800V | 5.5A (Tc) | 2.5 Ohm @ 2.75A, 10V | 5V @ 250µA | 30nC @ 10V | 1310pF @ 25V | 10V | ±30V |