- FET特性 :
- Rds开启(最大)@Id,Vgs :
-
- 1.2 Ohm @ 4A, 10V (1)
- 170 mOhm @ 10A, 10V (3)
- 170 mOhm @ 11A, 10V (3)
- 180 mOhm @ 11A, 10V (3)
- 190 mOhm @ 10A, 10V (3)
- 190 mOhm @ 18A, 10V (2)
- 260 mOhm @ 7A, 10V (3)
- 271 mOhm @ 7A, 10V (3)
- 280 mOhm @ 7.5A, 10V (2)
- 380 mOhm @ 6A, 10V (4)
- 7 mOhm @ 50A, 10V (1)
- 730 mOhm @ 4.75A, 10V (1)
- 750 mOhm @ 4.5A, 10V (1)
- 82 mOhm @ 14A, 10V (2)
- 850 mOhm @ 4A, 10V (4)
36 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,535
有现货
|
ON Semiconductor | MOSFET N-CH 600V 9.5A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 156W (Tc) | N-Channel | - | 600V | 9.5A (Tc) | 730 mOhm @ 4.75A, 10V | 4V @ 250µA | 57nC @ 10V | 2040pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,389
有现货
|
ON Semiconductor | MOSFET N-CH 200V 28A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 156W (Tc) | N-Channel | - | 200V | 28A (Tc) | 82 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 2200pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,403
有现货
|
IXYS | MOSFET N-CH 100V 90A I4-PAC-5 | TrenchMV™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | 156W (Tc) | N-Channel | - | 100V | 90A (Tc) | 7 mOhm @ 50A, 10V | 4.5V @ 250µA | 152nC @ 10V | 9400pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,136
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 8.7A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 156W (Tc) | N-Channel | - | 500V | 8.7A (Tc) | 850 mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | 527pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,092
有现货
|
STMicroelectronics | MOSFET N-CH 700V 7.5A TO-247 | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 156W (Tc) | N-Channel | - | 700V | 7.5A (Tc) | 1.2 Ohm @ 4A, 10V | 4.5V @ 100µA | 68nC @ 10V | 1370pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,829
有现货
|
IXYS | MOSFET N-CH 500V 19A ISOPLUS247 | HiPerFET™, PolarHT™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ | 156W (Tc) | N-Channel | - | 500V | 19A (Tc) | 190 mOhm @ 18A, 10V | 5V @ 4mA | 93nC @ 10V | 5500pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,804
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 14.5A TO-263 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 156W (Tc) | N-Channel | - | 500V | 14.5A (Tc) | 280 mOhm @ 7.5A, 10V | 4V @ 250µA | 66nC @ 10V | 1162pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,635
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 12A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 156W (Tc) | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1224pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,780
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 14.5A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 156W (Tc) | N-Channel | - | 500V | 14.5A (Tc) | 280 mOhm @ 7.5A, 10V | 4V @ 250µA | 66nC @ 10V | 1162pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,465
有现货
|
IXYS | MOSFET N-CH 500V 19A ISOPLUS220 | HiPerFET™, PolarHT™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | 156W (Tc) | N-Channel | - | 500V | 19A (Tc) | 190 mOhm @ 18A, 10V | 5V @ 4mA | 93nC @ 10V | 5500pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,756
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 8.7A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 156W (Tc) | N-Channel | - | 500V | 8.7A (Tc) | 850 mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | 527pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,744
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 12A D2PAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 156W (Tc) | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1224pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
2,275
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 12A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 156W (Tc) | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1224pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
3,466
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 12A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 156W (Tc) | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1224pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
3,868
有现货
|
Vishay Siliconix | MOSFET N-CHAN 650V 15A POWERPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 15A (Tc) | 271 mOhm @ 7A, 10V | 4V @ 250µA | 98nC @ 10V | 1749pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,964
有现货
|
Vishay Siliconix | MOSFET N-CHAN 650V 15A POWERPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 15A (Tc) | 271 mOhm @ 7A, 10V | 4V @ 250µA | 98nC @ 10V | 1749pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
3,116
有现货
|
Vishay Siliconix | MOSFET N-CHAN 650V 15A POWERPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 15A (Tc) | 271 mOhm @ 7A, 10V | 4V @ 250µA | 98nC @ 10V | 1749pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,155
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 20.3A PWRPAK8X8 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 20.3A (Tc) | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | 2404pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
2,906
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 20.3A PWRPAK8X8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 20.3A (Tc) | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | 2404pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,251
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 20.3A PWRPAK8X8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 20.3A (Tc) | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | 2404pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,719
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 19.8A POWERPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 19.8A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 102nC @ 10V | 2396pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
3,287
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 19.8A POWERPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 19.8A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 102nC @ 10V | 2396pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
3,988
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 19.8A POWERPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 156W (Tc) | N-Channel | - | 650V | 19.8A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 102nC @ 10V | 2396pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,868
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
823
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,197
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 20A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | Super Junction | 600V | 20A (Ta) | 170 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,124
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 8.7A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 156W (Tc) | N-Channel | - | 500V | 8.7A (Tc) | 850 mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | 527pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
3,881
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 8.7A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 156W (Tc) | N-Channel | - | 500V | 8.7A (Tc) | 850 mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | 527pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
2,974
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,815
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A 5DFN | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 156W (Tc) | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V |