- 系列 :
- FET特性 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,964
有现货
|
Renesas Electronics America | MOSFET N-CH 250V 17A TO3P | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK | 30W (Tc) | N-Channel | - | 250V | 17A (Ta) | 128 mOhm @ 8.5A, 10V | - | 20nC @ 10V | 1250pF @ 25V | 10V | ±30V | |||
|
获得报价 |
808
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 720pF @ 300V | 10V | ±30V | |||
|
获得报价 |
2,366
有现货
|
Vishay Siliconix | MOSFET N-CH 500V 5.3A TO220 FLPK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 Full Pack | 30W (Tc) | N-Channel | - | 500V | 5.3A (Tc) | 1.5 Ohm @ 2.5A, 10V | 5V @ 250µA | 20nC @ 10V | 325pF @ 100V | 10V | ±30V | |||
|
获得报价 |
950
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
|
获得报价 |
2,647
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 500 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
|
获得报价 |
2,344
有现货
|
Renesas Electronics America | MOSFET N-CH 150V W-PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WPAK | 30W (Tc) | N-Channel | - | 150V | 25A (Ta) | 58 mOhm @ 12.5A, 10V | - | 20nC @ 10V | 1250pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,776
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
|
获得报价 |
1,951
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
|
获得报价 |
677
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V |