- 系列 :
- 零件状态 :
- 供应商设备包 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
3,699
有现货
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,323
有现货
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,876
有现货
|
Diodes Incorporated | MOSFET N-CH 35V 6.7A SOT223 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | - | 35V | 4.8A (Ta), 6.7A (Tc) | 50 mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | 950pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,933
有现货
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,887
有现货
|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 5A SOT26 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 2W (Ta) | P-Channel | - | 30V | 5A (Ta) | 60 mOhm @ 5A, 10V | 3V @ 250µA | 27nC @ 10V | 551.57pF @ 15V | 4.5V, 10V | ±20V |