- 系列 :
- 包装材料 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
10 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,510
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,198
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,170
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7.7 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,654
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7.7 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,343
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
813
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 215W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
691
有现货
|
ON Semiconductor | MOSFET N-CH 500V 19A TO-3P | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 239W (Tc) | N-Channel | - | 500V | 19A (Tc) | 265 mOhm @ 9.5A, 10V | 5V @ 250µA | 60nC @ 10V | 2860pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,013
有现货
|
ON Semiconductor | MOSFET N-CH 500V 18A TO-220F | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 38.5W (Tc) | N-Channel | - | 500V | 18A (Tc) | 265 mOhm @ 9A, 10V | 5V @ 250µA | 60nC @ 10V | 2860pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,024
有现货
|
ON Semiconductor | MOSFET N-CH 500V 18A TO-220F | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 38.5W (Tc) | N-Channel | - | 500V | 18A (Tc) | 265 mOhm @ 9A, 10V | 5V @ 250µA | 60nC @ 10V | 2860pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,547
有现货
|
ON Semiconductor | MOSFET N-CH 500V 18A TO-220 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 235W (Tc) | N-Channel | - | 500V | 18A (Tc) | 265 mOhm @ 9A, 10V | 5V @ 250µA | 60nC @ 10V | 2860pF @ 25V | 10V | ±30V |