- FET型 :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
22 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,724
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 20A TO-220SIS | π-MOSVII | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 250V | 20A (Ta) | 100 mOhm @ 10A, 10V | 3.5V @ 1mA | 55nC @ 10V | 2550pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
2,248
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,260
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,798
有现货
|
Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,079
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,961
有现货
|
Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,601
有现货
|
Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,442
有现货
|
Vishay Siliconix | MOSFET N-CH 60V 17A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 3.7W (Ta), 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,859
有现货
|
Vishay Siliconix | MOSFET N-CH 60V 17A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,345
有现货
|
Vishay Siliconix | MOSFET N-CH 50V 15A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 40W (Tc) | N-Channel | - | 50V | 15A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 17nC @ 10V | 850pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,624
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,373
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,782
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,723
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,557
有现货
|
Vishay Siliconix | MOSFET N-CH 55V 17A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 60W (Tc) | N-Channel | Current Sensing | 55V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 24nC @ 10V | 720pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,310
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,361
有现货
|
Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,378
有现货
|
Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 3.7W (Ta), 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,959
有现货
|
Vishay Siliconix | MOSFET N-CH 60V 17A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,221
有现货
|
Infineon Technologies | MOSFET P-CH 55V 19A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,326
有现货
|
Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 3.7W (Ta), 60W (Tc) | N-Channel | - | 60V | 17A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,132
有现货
|
Vishay Siliconix | MOSFET N-CH 50V 15A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 40W (Tc) | N-Channel | - | 50V | 15A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 17nC @ 10V | 850pF @ 25V | 10V | ±20V |
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