- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
1,164
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11.4A TO247 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||
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获得报价 |
3,702
有现货
|
Infineon Technologies | MOSFET N-CH 4VSON | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | Thin-Pak (8x8) | 104.2W (Tc) | N-Channel | - | 650V | 10.9A (Tc) | 340 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||
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获得报价 |
3,977
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11.4A TO263 | CoolMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||
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|
获得报价 |
1,198
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11.4A TO263 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||
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|
获得报价 |
2,621
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11.4A TO263 | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||
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获得报价 |
3,230
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11.4A TO262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | ||
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获得报价 |
1,628
有现货
|
Infineon Technologies | MOSFET N-CH 650V 11.4A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V |